Dr. Rita Tilmann is a surface analysis scientist specializing in advanced materials characterization, with a strong academic background and experience spanning university research and industrial R&D at imec in Leuven, Belgium. She completed her PhD at Universität der Bundeswehr München (Germany) in 2022, investigating two-dimensional transition-metal dichalcogenides using Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS). 

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At imec, Dr Rita Tilmann contributed to the development and application of advanced SIMS techniques to address challenging metrology needs in next-generation semiconductor technologies, including dopant quantification and the characterization of complex three-dimensional structures. Her expertise includes Self-Focusing SIMS (SF-SIMS), an innovative approach designed to enhance the analysis of small, patterned semiconductor structures by improving the spatial selectivity of secondary ions. Her work combines analytical method development, experimental expertise and advanced data interpretation to deliver meaningful insights into material composition and properties.

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Dr. Rita Tilmann is an active contributor to the international surface analysis and semiconductor metrology community, with scientific publications and conference contributions, including invited presentations at international scientific workshops. Her research interests include innovative (ToF-)SIMS methodologies, Self-Focusing SIMS, Orbitrap-SIMS, two-dimensional materials and advanced semiconductor characterization. Through scientific consulting, measurement support, data interpretation, reporting and tailored training, she helps industrial and academic partners overcome complex analytical challenges.